Process Technology for Silicon Carbide Devices

前表紙
Carl-Mikael Zetterling
IET, 2002 - 176 ページ

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This second book in the Processing series explains why SiC is so useful in electronics and gives clear guidance on the various processing steps. Growth, doping, etching, contact formation and dielectrics are all described in detail. The final chapter explains how to integrate the processing steps, and shows typical device cross-sections for over 20 different devices. Engineers who are developing systems for the fabrication of SiC devices are in need of guidance from experts in academia and the industry who have been pioneering the field: the book is designed as an advanced tutorial and reference for this purpose. A glossary of terms used in SiC technology is included.

 

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目次

Advantages of SiC
1
Bulk and epitaxial growth of
13
Ion implantation and diffusion in
51
Wet and dry etching of
85
Thermally grown and deposited dielectrics on SiC
93
Schottky and ohmic contacts to SiC
111
34
125
5
131
Glossary
159
Other resources
165
4
172
著作権

多く使われている語句

4H SiC acceptor aluminium atoms backside of wafer bandgap bipolar boron breakdown capacitance carbon carrier channel mobility characterisation charge cm² cm³ conduction band crystal damage deep centres defects depletion deposited dielectric diffusion DLTS donor dopants doping doping concentration drift region dry oxidation electric field electrical properties emission epilayer epitaxial growth etch rate Forum Switzerland gate graphite grown Hall effect hexagonal high-temperature higher IEEE impurities interstitial ion implantation ionisation energy layer Lett low-doped masks material measurements metal method MOSFETs mtorr needed nitride nitrogen and phosphorus ohmic contacts on-resistance Overcoming problems p-n junction p-type parameters photoresist Phys plasma polytypes post-implantation anneal reactor reduce sample Schottky barrier Schottky barrier height Schottky contacts Schottky diodes Section semiconductor SiC polytypes silicon dioxide specific contact resistance structures substrate surface susceptor techniques temperature thermal oxidation thickness tion valence band vapour voltage wafer FIGURE wet oxidation Zetterling

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書誌情報

書籍名Process Technology for Silicon Carbide Devices
EMIS processing series 第 第 2 号 巻, Electronic Materials Information Service
Materials, Circuits and Devices Series 第 第 2 号 巻
編集者Carl-Mikael Zetterling
寄与者Institution of Electrical Engineers
版イラスト付き
出版社IET, 2002
ISBN0852969988, 9780852969984
ページ数176 ページ
  
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