Silicon Carbide and Related Materials, Proceedings of the Fifth Conference, 1-3 November 1993, Washington DC, USAMichael G. Spencer Taylor & Francis, 1994/06/29 - 737 ページ USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding |
目次
applications | 7 |
heterojunction diodes | 105 |
WJ Schaffer HS Kong G H Negley and J W Palmour | 155 |
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5th SiC 6H SiC absorption acceptor activation energy annealing Appl atomic B-SiC band bandgap breakdown calculated carbon carrier concentration chemical vapor deposition Choyke W J cm³ crystalline cubic curve decrease defects devices diffraction diodes dislocations donor dopant doping electrical electron mobility epilayers epitaxial layers etch rate exciton experimental fabricated films grown flow rate gate growth rate growth temperature hexagonal high temperature hydrogen I-V characteristics impurity increasing intensity interface Ioffe Physico-Technical Institute JFET junction lattice Lett low temperature luminescence measured MESFET n-type nitride nitrogen observed obtained ohmic contacts optical oxidation Paper presented parameters peak phonon photoluminescence Phys pn junction polytype ratio Related Materials Conf room temperature sample sccm semiconductor shown in Figure shows SiC and Related SiC films SiH4 silicon carbide single crystal spectra spectrum structure substrate substrate temperature surface technique temperature dependence thermal thickness voltage wafer wavelength X-ray