SiC Materials and Devices
Academic Press, Jul 2, 1998 - Technology & Engineering - 420 pages
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
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Growth and Doping
Ohmic Contacts Schottky Contacts and pn Junctions
Chapter 4 SiC Transistors
Chapter 5 SiC for Applications in HighPower Electronics
Chapter 6 SiC Microwave Devices
2DEG 4H-SiC MESFET 6H-SiC substrates AlGaN ampliﬁer annealing Appl applications bandgap barrier height bias blue LEDs breakdown voltage Carbide and Related channel characteristics chemical vapor deposition conductivity Conf contact resistance crystals current density defects detector donor doping doping level drain electric ﬁeld electron mobility electronic devices emission energy epilayers epitaxial growth epitaxial layers fabricated ﬁlms ﬁrst ﬂow frequency GaAs gate length growth of SiC growth rate High Temperature ideality factor IMPATT diode impurities increased interface ion implantation Kyoto ICSCRM lasers lattice layers grown Lely Lett Matsunami MESFET metal micropipes microwave MODFETs ohmic contacts operation optical p-n junction p-type p-type 6H-SiC parameters Phys polytype properties region reported RF performance room temperature samples saturation Schottky barrier Schottky contacts Schottky diodes Semiconductors shown in Fig SiC devices Silicon Carbide simulated speciﬁc structure substrates surface technique thermal thickness transconductance transistors velocity wafers