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SiC Materials and Devices

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Academic Press, Jul 2, 1998 - Technology & Engineering - 420 pages
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
  

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Selected pages

Contents

Growth and Doping
21
Ohmic Contacts Schottky Contacts and pn Junctions
77
Chapter 4 SiC Transistors
161
Chapter 5 SiC for Applications in HighPower Electronics
195
Chapter 6 SiC Microwave Devices
237
Chapter 7 SiCBased UV Photodiodes and LightEmitting Diodes
283
Chapter 8 Beyond Silicon Carbide IIIV NitrideBased Heterostructures and Devices
307
Index
395
Contents of Volumes in this Series
405
Copyright

Common terms and phrases

2DEG 4H-SiC MESFET 6H-SiC substrates AlGaN amplifier annealing Appl applications bandgap barrier height bias blue LEDs breakdown voltage Carbide and Related channel characteristics chemical vapor deposition conductivity Conf contact resistance crystals current density defects detector donor doping doping level drain electric field electron mobility electronic devices emission energy epilayers epitaxial growth epitaxial layers fabricated films first flow frequency GaAs gate length growth of SiC growth rate High Temperature ideality factor IMPATT diode impurities increased interface ion implantation Kyoto ICSCRM lasers lattice layers grown Lely Lett Matsunami MESFET metal micropipes microwave MODFETs ohmic contacts operation optical p-n junction p-type p-type 6H-SiC parameters Phys polytype properties region reported RF performance room temperature samples saturation Schottky barrier Schottky contacts Schottky diodes Semiconductors shown in Fig SiC devices Silicon Carbide simulated specific structure substrates surface technique thermal thickness transconductance transistors velocity wafers

References to this book

From Google Scholar

Richardson’s constant in inhomogeneous silicon carbide Schottky ...
Fabrizio Roccaforte, Francesco La Via, Vito Raineri, Roberto Pierobon, Enrico Zanoni - 2003 - Journal of Applied Physics
Specific features of band structure in large-sized Si 2-x C x (1 ...
I V Kityk - 2003 - Semicond. Sci. Technol
Photothermal ionization spectroscopy of shallow nitrogen donor ...
CQ Chen, J Zeman, F Engelbrecht, C Peppermüller, R Helbig, ZH Chen, G Martinez - 2000 - Journal of Applied Physics
Ion beam synthesis of buried SiC layers in silicon: Basic physical ...
Jörg KN Lindner - 2001 - Nuclear Inst. and Methods in Physics Research, B
All Scholar search results »

Bibliographic information

QR code for SiC Materials and Devices
TitleSiC Materials and Devices
Volume 52 of Semiconductors and semimetals
ContributorsRobert K. Willardson, Eicke R. Weber
PublisherAcademic Press, 1998
ISBN0080864503, 9780080864501
Length420 pages
Subjects ›  › 

Science / Physics / Condensed Matter
Science / Physics / General
Technology & Engineering / Electrical
Technology & Engineering / Electronics / General
Technology & Engineering / Electronics / Microelectronics
Technology & Engineering / Materials Science
Technology & Engineering / Optics
  
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