Silicon Carbide Micro Electromechanical Systems for Harsh EnvironmentsImperial College Press, 2006 - 181 ページ This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product. Sample Chapter(s). Chapter 1: Introduction to Silicon Carbide (SIC) Microelectromechanical Systems (MEMS) (800 KB). Contents: Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) (R Cheung); Deposition Techniques for SiC MEMS (C A Zorman et al.); Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996OCo2002 (L M Porter & F A Mohammad); Dry Etching of SiC (S J Pearton); Design, Performance and Applications of SiC MEMS (S Zappe). Readership: Academic researchers in MEMS and industrial engineers engaged in SiC MEMS research." |
目次
1 Introduction to Silicon Carbide SiC Microelectromechanical Systems MEMS | 1 |
2 Deposition Techniques for SiC MEMS | 18 |
1996 2002 | 46 |
4 Dry Etching of SiC | 102 |
5 Design Performance and Applications of SiC MEMS | 128 |
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多く使われている語句
achieved Actuators addition annealing Appl applications atomic barrier height beam bonding bulk chemical compared concentration conductivity Conf crystal defects demonstrated deposition developed devices doping effect electrical Electron energy epitaxial et al etch rate example fabrication factor field Figure formation Forum frequency function growth high temperature higher IEEE increase indicates interface layer Lett lower LPCVD material measurements mechanical Mehregany metal microelectromechanical systems micromachining ohmic contacts operation oxidation p-type performance phase Phys piezoresistors plasma poly-SiC polysilicon potential presented pressure properties range reaction reactor reduced relatively reported resistance resonators Schottky diodes selectivity sensors shown shows SiC films SiC MEMS silicon carbide single stability step stress structures substrate surface techniques technologies tested thermal thickness thin films voltage wafers Zorman