SiC Materials and Devices
Academic Press, Jul 2, 1998 - Technology & Engineering - 420 pages
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
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Ohmic Contacts Schottky Contacts and pn Junctions
Chapter 4 SiC Transistors
Chapter 6 SiC Microwave Devices
Chapter 7 SiCBased UV Photodiodes and LightEmitting Diodes
Contents of Volumes in this Series
2DEG 4H-SiC MESFET AlGaN annealing Appl applications bandgap barrier height bias blue LEDs breakdown voltage Carbide and Related channel chemical vapor deposition conductivity Conf contact resistance crystals current density defects detectors donor doping doping level drain electric field electron mobility electronic devices emission energy epilayers epitaxial growth epitaxial layers FETs films frequency GaAs gate length growth of SiC growth rate High Temperature I-V characteristics ideality factor IMPATT diode impurities increased interface ion implantation Kyoto ICSCRM lasers lattice layers grown Lely Lett Matsunami MESFET metal micropipes microwave MODFETs n-type 6H-SiC obtained ohmic contacts operation optical p-n junction p-type parameters Phys polytype properties Q-cm region reported RF performance room temperature samples saturation Schottky barrier Schottky contacts Schottky diodes Semiconductors shown in Fig SiC devices SiC substrates Silicon Carbide simulated structure substrates surface technique thermal thickness transconductance transistors velocity wafers