Silicon Carbide Microelectromechanical Systems for Harsh EnvironmentsWorld Scientific, 2006 - 181 ページ This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS.This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product. |
目次
1 Introduction to Silicon Carbide SiC Microelectromechanical Systems MEMS | 1 |
2 Deposition Techniques for SiC MEMS | 18 |
1996 2002 | 46 |
4 Dry Etching of SiC | 102 |
5 Design Performance and Applications of SiC MEMS | 128 |
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多く使われている語句
3C-SiC films Actuators amorphous annealing APCVD Appl atomic bandgap bulk micromachined C.A. and Mehregany cantilever carbon chemical chuck power Conf contact resistance contacts to p-type crystal developed doping Eickhoff epitaxial fabrication films deposited fluorine formation Forum gas sensors gauge factor growth harsh environments high temperature increase interface ion energy Lett LPCVD material systems mechanical MEMS applications metal microelectromechanical systems morphology mTorr Ni2Si Obermeier ohmic contacts Okojie operating temperature oxidation p-type p-type SiC PECVD phase Phys piezoresistive piezoresistors plasma etching poly-SiC films polycrystalline polysilicon polytypes precursors pressure sensors Proc properties of SiC reaction reactor residual stress Schottky barrier Schottky barrier height Schottky contacts Schottky diodes semiconductor SiC etch rate SiC films SiC MEMS devices SiC substrate SiC surface SiC-based silicides silicon carbide SiO2 source power stability structures surface micromachining techniques technologies thermal thickness thin films voltage wafers wire bonding Zetterling Zorman